2SD1781 0.8a, 40v npn silicon plastic encapsulated transistor elektronische bauelemente 30-dec-2010 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view a l c b d g h j f k e 1 2 3 1 2 3 ? ? emitte r ? ? base collector ? ? features ? very low v ce (sat).v ce (sat) < 0.4 v (typ.) (i c /i b = 500ma / 50ma) ? complements to 2sb1197 classification of h fe package information package mpq leadersize sot-23 3k 7? inch absolute maximum ratings (t a = 25c unless otherwise noted) parameter symbol ratings unit collector to base voltage v cbo 40 v collector to emitter voltage v ceo 32 v emitter to base voltage v ebo 5 v collector current - continuous i c 0.8 a collector power dissipation p c 200 mw junction and storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector?base breakdown voltage bv cbo 40 - - v i c = 50 ? a, i e = 0 collector?emitter breakdown voltage bv ceo 32 - - v i c = 1ma, i b = 0 emitter?base breakdown voltage bv ebo 5 - - v i e = 50 ? a, i c = 0 collector cut-off current i cbo - - 0.5 ? a v cb = 20v, i e = 0 emitter cut-off current i ebo - - 0.5 ? a ? v eb = 4v, i c = 0 dc current gain h fe 120 - 390 i c = 100ma, v ce = 3v collector?emitter saturation voltage v ce(sat) - - 0.4 v i c = 500ma, i b = 50ma transition frequency f t - 150 - mhz v ce = 5v, i c = 50ma, f = 100mhz collector output capacitance c ob - 10 - pf v cb = 10v, i e = 0, f = 1.0mhz product-rank 2SD1781-q 2SD1781-r range 120 ~ 270 180 ~ 390 marking afq afr rohs compliant product a suffix of ?-c? specifies halogen & lead-free sot-23 ref. millimete r ref. millimete r min. max. min. max. a 2.80 3.00 g 0.10 ref. b 2.25 2.55 h 0.55 ref. c 1.20 1.40 j 0.08 0.15 d 0.90 1.15 k 0.5 ref. e 1.80 2.00 l 0.95 typ. f 0.30 0.50
2SD1781 0.8a, 40v npn silicon plastic encapsulated transistor elektronische bauelemente 30-dec-2010 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
2SD1781 0.8a, 40v npn silicon plastic encapsulated transistor elektronische bauelemente 30-dec-2010 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
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